Method of forming ohmic electrodes on semiconductor wafer

Details Method of forming ohmic electrodes on semiconductor wafer Method of forming ohmic electrodes on semiconductor wafer

1996-11-13

1999-03-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438577, 438606, 438670, 148DIG50, H01L 21441, H01L 21265

Patent

active

058829954

ABSTRACT:
In the case where ohmic electrodes are formed on a semiconductor wafer, first of all, an insulating layer is formed on the semiconductor wafer, then a resist layer is formed on the insulating layer. Next, apertures for forming electrodes are formed in first regions of the resist layer corresponding to regions where the electrodes are formed, while dummy apertures are also formed in a second region of the resist layer in a rest part other than the first regions. Thereafter, the insulating layer is etched using the resist layer as a mask. With the resist layer remaining, electrode material is accumulated on the surface of the semiconductor wafer, and thereafter, the resist layer is removed. As a result, electrodes with desirable ohmic characteristics are stably formed.

REFERENCES:
patent: 4731340 (1988-03-01), Chang et al.
patent: 4824800 (1989-04-01), Takano
patent: 5362678 (1994-11-01), Komaru et al.
Wolf, Silicon Processing for the VLSI ERA Lattice Press p. 84, 1990.

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