Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1996-08-19
1999-03-16
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438769, H01L 2144, H01L 2131
Patent
active
058829938
ABSTRACT:
A semiconductor process for producing two gate oxide thicknesses within an integrated circuit in which a semiconductor substrate having a first region and a second region is provided. The first region and the second region are laterally displaced with respect to one another. A nitrogen species impurity distribution is then introduced into the first region of the semiconductor substrate. Thereafter, a gate dielectric layer is grown on an upper surface of the semiconductor substrate. The gate dielectric has a first thickness over the first region of the semiconductor substrate and a second thickness over the second region of the semiconductor substrate. The first thickness is less than the second thickness. In a CMOS embodiment of the present invention, the first region of the semiconductor substrate comprises p-type silicon while the second substrate region comprises n-type silicon. Preferably, the step of introducing the nitrogen species impurity distribution into the semiconductor substrate is accomplished by thermally oxidizing the first substrate region in a nitrogen bearing ambient. In a presently preferred embodiment, the nitrogen bearing ambient includes N.sub.2 O, NH.sub.3, O.sub.2 and HCl in an approximate ratio of 60:30:7:3. In alternative embodiments the nitrogen bearing ambient includes NO, O.sub.2 and HCl in an approximate ratio of 90:7:3 or N.sub.2 O, O.sub.2 and HCl in an approximate ratio of 90:7:3. The introduction of the nitrogen species impurity into first substrate region 102 may alternatively be accomplished with rapid thermal anneal processing.
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Gardner Mark I.
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kowert Robert C.
Lebentritt Michael S.
Niebling John F.
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