Semiconductor device having a capacitor formed on a surface of a

Details Semiconductor device having a capacitor formed on a surface of a Semiconductor device having a capacitor formed on a surface of a

1995-11-29

1998-10-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257704, 257795, 257924, 361811, 361820, H01L 2306, H01L 2310, H01L 2315

Patent

active

058181067

ABSTRACT:
A semiconductor device which includes a ceramic package main body, a semiconductor element and a closure for sealing the semiconductor element in the package. A capacitor is formed on an upper or lower surface of the closure. The capacitor has a dielectric film interposed between a pair of electrode films. The dielectric film includes a ceramic filler and an amorphous glass. The closure and the package main body are sealed. A terminal formed in the package main body and the electrode film of the capacitor are connected electrically. High-density packaging on a substrate can be achieved. High strength of the closure itself can be maintained. Thermal stress developed in the closure itself, or the conjugated portion between the closure and the package main body, can be suppressed. Reliability of a sealed structure in the semiconductor device for a long period of time can be increased.

REFERENCES:
patent: 4654694 (1987-03-01), Val
patent: 4743302 (1988-05-01), Dumesnil et al.
patent: 4827082 (1989-05-01), Horiuchi et al.
patent: 5047374 (1991-09-01), Nicholson et al.
patent: 5162062 (1992-11-01), Carroll et al.
patent: 5334558 (1994-08-01), Dietz et al.

Affiliated with

Also associated with

Rating

Semiconductor device having a capacitor formed on a surface of a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a capacitor formed on a surface of a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a capacitor formed on a surface of a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-81412