Local-oxidation of silicon (LOCOS) process using ceramic barrier

Details Local-oxidation of silicon (LOCOS) process using ceramic barrier Local-oxidation of silicon (LOCOS) process using ceramic barrier

1992-04-22

1993-05-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 28, 148DIG106, H01L 2176

Patent

active

052121119

ABSTRACT:
A local oxidation of silicon (LOCOS) process for semiconductor manufacture in which a barrier layer for the oxidation process and for a subsequent field implant is formed of a ceramic material. The ceramic material is one that can be easily deposited on silicon with low stress and is characterized by an ion stopping power greater than that of silicon nitride. Suitable ceramic materials include metal oxides, titanates, carbides, glasses and ferroelectrics.

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