Plasma processing apparatus and the method of the same

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20429831, 20429833, 20429834, 20429837, 20429838, 156345, 156643, 118723, 134 1, B01J 1912, C23F 404

Patent

active

052118258

ABSTRACT:
A plasma processing apparatus performs a sample processing and cleaning processing. The sample processing is carried out by generating a reaction gas plasma within a vacuum vessel of the apparatus using an electron cyclotron resonance excitation. The cleaning processing is carried out to clean the inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel. Generation of the cleaning gas plasma takes place by using either one of the following processes:

REFERENCES:
patent: 4576698 (1986-03-01), Gallagher et al.
patent: 4657616 (1987-04-01), Benzing et al.
patent: 4816113 (1989-03-01), Yamazaki
patent: 4960488 (1990-10-01), Law et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5024748 (1991-06-01), Fujimura
patent: 5084125 (1992-01-01), Aoi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing apparatus and the method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and the method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and the method of the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-802170

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.