Thermal gas cracking source technology

Details Thermal gas cracking source technology Thermal gas cracking source technology

1994-12-21

1997-12-02

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723HC, 118724, 134 11, 134105, C23C 1400

Patent

active

056931735

ABSTRACT:
An atomic hydrogen source. The source has an elongated cylindrical structure with proximal and distal or inner and outer ends. A head structure is disposed at the proximal end for communicative connection with electrical power, gas, temperature control and related systems. A mounting flange is disposed along the length of the source for connection with an MBE or other apparatus. A tube structure is disposed at the distal end for extension into the apparatus. The tube structure includes gas and power conduction elements, including a high temperature resistive filament for cracking gas.

REFERENCES:
patent: 3989549 (1976-11-01), Cangiano
patent: 4592308 (1986-06-01), Shih et al.
Kuroda et al., "Selective Growth of InGaAs/InP Layers By Gas Source MBE With Atomic Hydrogen Irradiation", NEC Corp., Opto-electronics Research Laboratories, 52-55.
Sugaya et al., "Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation", Japanese Journal of Applied Physics, vol. 30, No. 3A, Mar., 1991, L402-L404.
Shimomura et al., "Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation", Japanese Journal of Applied Physics, vol. 31, Part 2, No. 5B, May 15, 1992, L628-L631.
Kurado et al., "Selective Growth of InGaAs-InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation", Japanese Journal of Applies Physics, vol. 32, Part 2, No. 11A, Nov. 1, 1993.
Chun et al., "Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen", Japanese Journal of Applied Physics, vol. 32, Part 2, No. 2B, Feb., 1993, L287-L289.
Kao et al., "Effects of Atomic Hydrogen On Impurity Reduction in MOMBE-Grown GaAs", Mal. Res. Soc. Symp. Proc., vol. 145, 1989 Materials Research Society, 57-61.
Okada et. al., "High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications", Japanese Journal of Applied Physics, vol. 32, Part 2, No. |0B, Oct. 15, 1993, L1556-L1558.

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