Monolithic IC formed of a CCD, CMOS and a bipolar element

Details Monolithic IC formed of a CCD, CMOS and a bipolar element Monolithic IC formed of a CCD, CMOS and a bipolar element

1992-08-13

1994-06-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257506, 257215, 257510, H01L 2976, H01L 2994, H01L 2900

Patent

active

053192354

ABSTRACT:
A composite semiconductor element includes a semiconductor substrate having a single crystal region projecting in the form of an island, an epitaxial growth layer formed on the semiconductor substrate so as to surround the single crystal region, an insulating isolation layer formed in predetermined regions of the epitaxial growth layer, of the single crystal region, and of the semiconductor substrate so as to insulate/isolate the epitaxial growth layer and the single crystal region from each other and to form a plurality of island-like element regions in the epitaxial growth layer and in the single crystal region, an n-channel MOS transistor and a CCD element respectively formed in element regions in the single crystal region, and a p-channel MOS transistor and a bipolar element respectively formed in element regions in the epitaxial growth layer.

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