Insulated gate semiconductor device having an elevated plateau l

Details Insulated gate semiconductor device having an elevated plateau l Insulated gate semiconductor device having an elevated plateau l

1992-01-13

1994-06-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257408, 257409, H01L 2976, H01L 2701, H01L 2994, H01L 31062

Patent

active

053192311

ABSTRACT:
An insulated gate device has a substrate with a surface protrusion bearing a gate electrode. A conductive substance is provided on a side of the protrusion and on the substrate, with a height not above the upper surface of the protrusion. The conductive substance may be a metallic material or a semiconductive material, and functions as source and/or drain regions for a channel region formed in a protrusion under the gate electrode. Also, the conductive substance may contact the side surface of the protrusion either directly, or indirectly through an insulating layer capable of passing tunnel current.

REFERENCES:
patent: 4954855 (1990-09-01), Mimura et al.
patent: 5041885 (1991-08-01), Gualandris et al.
patent: 5049953 (1991-09-01), Mihara et al.
patent: 5177568 (1993-01-01), Honma et al.

Affiliated with

Also associated with

Rating

Insulated gate semiconductor device having an elevated plateau l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate semiconductor device having an elevated plateau l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate semiconductor device having an elevated plateau l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794880