Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1982-08-19

1984-09-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 148187, 156651, 156653, 156657, 1566591, 1566611, 156662, 357 49, 427 93, 430316, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044722400

ABSTRACT:
A method for forming a groove in a semiconductor substrate is disclosed. The groove is formed in two steps. In the first step, a first shallow groove is formed in the semiconductor substrate and then a first mask pattern is selectively formed on the wall of the first groove. A second groove is formed in the bottom surface of the first groove using the first mask pattern as a mask. Subsequently the first mask is etched off. The obtained groove may be buried with an insulating material or an electrode material.

REFERENCES:
patent: 3753803 (1973-08-01), Nomura et al.
patent: 3767493 (1973-10-01), Kump
patent: 4040891 (1977-08-01), Chang et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4397075 (1983-08-01), Fatula et al.

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