Plasma etching system

Details Plasma etching system Plasma etching system

1993-05-03

1994-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 118 501, 118620, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

052984656

ABSTRACT:
Disclosed is a system, including both method and apparatus, for enhancing the plasma etching of a semiconductor wafer. The system enhances etchant uniformity while greatly reducing plasma contamination. Etching is performed in a housing for processing a semiconductor wafer having a wafer perimeter defined by an outer wafer edge, a top surface and a bottom surface. The plasma etch technique includes a plasma positioned substantially coplanar with and proximate to the semiconductor wafer. The plasma has a perimeter defined by an outer plasma edge and extending beyond substantially all of the wafer perimeter. Provided is a means for introducing an inert gas between the wafer perimeter and the plasma perimeter so the inert gas may or may not hit the wafer's bottom surface. Plasma and wafer can each have a circular shape where the plasma and the wafer are proximate to each other. Further provided can be a plasma focussing device having an inner wall residing beside and encircling that portion of the plasma overlying the wafer, the device positioned coaxially with the wafer and having a diameter larger than the wafer diameter.

REFERENCES:
patent: 4689112 (1987-08-01), Bersin

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