Transistor and method for manufacturing the same

Details Transistor and method for manufacturing the same Transistor and method for manufacturing the same

1996-02-26

1996-12-03

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257 66, 257 70, 257623, 437 44, 437 80, H01L 29784

Patent

active

055811027

ABSTRACT:
In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.

REFERENCES:
patent: 5308998 (1994-05-01), Yamazaki et al.

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