Electrodes for high dielectric constant materials

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428697, 428698, 428699, 428701, C23C 1406

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active

055209920

ABSTRACT:
Novel methods of forming capacitors containing high dielectric materials are disclosed. Capacitors are made by forming a layer of conductive metal nitride (e.g. ruthenium nitride, 28), then forming a layer of a high dielectric constant material (e.g. barium strontium titanate, 30) on the metal nitride layer, then forming a layer of a non-metal containing electrically conductive compound (e.g. ruthenium oxide, 32) on the layer of high dielectric constant material. Typically, the high dielectric constant material is a transition metal oxide, a titanate, a titanate doped with one or more rare earth elements, a titanate doped with one or more alkaline earth metals, or combinations thereof. Preferably, the conductive compound is ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, titanium monoxide, or combinations thereof. The conductive compound may be doped to increase its electrical conductivity.

REFERENCES:
patent: 4184192 (1980-01-01), Yoshido et al.
patent: 4186423 (1980-01-01), Yoshido et al.
patent: 4387387 (1983-06-01), Yamazaki
patent: 4528546 (1985-07-01), Paoli
patent: 4598306 (1986-07-01), Nath et al.
patent: 4959745 (1990-09-01), Suguro
patent: 4982309 (1991-01-01), Shepherd
patent: 5003428 (1991-03-01), Shepherd
patent: 5005102 (1991-04-01), Larson
patent: 5031144 (1991-07-01), Persky
patent: 5046043 (1991-09-01), Miller et al.
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5070026 (1991-12-01), Greenwald et al.
patent: 5085926 (1992-02-01), Iida et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
Kazuya, et al., "Semiconductor Device", Patent Abstracts of Japan, vol. 17, No. 213, 26 Apr. 1993.
Tsutomu, et al., "Capacitor", Patent Abstracts of Japan, vol. 9, No. 211, 29 Aug. 1985.
S. Zaima, T. Furuta, and Y. Yasuda, "Preparation and Properties of Ta2O.sub.5 Films by LPCVD for ULSI Application," J. Electrochem. Soc., vol. 137, No. 4.
S. Zaima, T. Furuta, Y. Koide and Y. Yasuda, "Conduction Mechanism of Leakage Current in Ta.sub.2 O.sub.5 Films on Si Prepared by LPCVD," J. Electrochem Soc., vol. 137, No. 9, pp. 2876-2879, Sep. 1990.
Q. X. Jia, Z. Q. Shi, K. L. Jiao and W. A. Anderson, "Reactively Sputtered RuO.sub.2 Thin Film Resistor with Near Zero Temperature Coefficient of Resistance," Thin Solid Films, 196 (1991) 29-34 Electronics and Optics.
Y. Nishioka, H. Shinriki, and K. Mukai, "Influence of SiO.sub.2 at the Ta.sub.2 O.sub.5 /Si Interface of Dielectric Characteristics of Ta.sub.2 O.sub.5 Capacitors," J. Appl Phys. 61(6), pp. 2335-2338, 15 Mar. 1987.
Y. Nishioka, H. Shinriki, and K. Mukai, "Time Dependent, Dielectric Breakdown Characteristics of Ta.sub.2 O.sub.5 /SiO.sub.2 Double Layers," J. Electrochem Soc., vol. 136, No. 3, Mar. 1989, pp. 872-873.
R. W. Vest, "Materials Science of Thick Film Technology," Ceramic Bulletin vol. 65 #4 1986 pp. 631-636.

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