Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1990-07-10
1992-08-04
Bowler, Alyssa H.
Static information storage and retrieval
Systems using particular element
Capacitors
365174, 365182, 357 235, 357 236, G11C 1134, G11C 1122, G11C 700
Patent
active
051365332
ABSTRACT:
A dynamic RAM is provided with enhanced charge storage capacity by increasing the surface area between the two electrodes of the storage capacitor. The first electrode consists of a thick conductive layer whose vertical sidewalls provide the extra surface area for charge storage. The second electrode is used to partially planarize the surface topology. The first electrode can also be used as the gate of a sensing transistor in a signal amplifying cell, as well as in multiport and multistate dynamic RAM cells.
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Kaga, et al., A 4.2 Micron.sup.2 Half-V.sub.CC Sheath-Plate Capacitor DRAM Cell with Self-Aligned Buried Plate-Wiring, IEEE 1987 IEDM Digest, pp. 332-335.
Sakurai, et al., Transparent-Refresh DRAM (TReD) Using Dual-Port DRAM Cell, 1988 IEEE Custom Integrated Circuits Conference, pp. 4.3.1-4.3.4.
Furuyama, et al., An Experimental 2-Bit/Cell Storage DRAM for Macro Cell or Memory-On-Logic Application, 1988 IEEE CICC, pp. 4.4.1-4.4.4.
Chatterjee et al., "A Survey of High Density Dynamic RAM Cell Concepts", IEEE Trans. Electron Devices, vol. ED26, No. 6, Jun. 1979, pp. 827-839.
Chatterjee, et al., "Trench and Compact Structures for dRAMS" Technical Digests of IEEE Int'l. Electron Devices Meeting, Dec. 1986, pp. 128-131.
Inoue et al., "A 16 Mb DRAM with an Open Bit-Line Architecture", IEEE 1988 ISCC Digest of Technical Papers, p. 246.
Bowler Alyssa H.
Caserza Steven F.
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