Method for fabrication of high minority carrier lifetime, low to

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156620, 148 15, B01J 1740

Patent

active

040947300

ABSTRACT:
A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod to single crystal structure and distributing the dopant.

REFERENCES:
patent: 3167512 (1965-01-01), Ziegler
patent: 3520741 (1970-07-01), Mankarious
patent: 3895965 (1975-07-01), MacRae
patent: 3895966 (1975-07-01), MacDougall
patent: 3954416 (1976-05-01), Keller

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