Preventing boron penetration through thin gate oxide of P-channe

Details Preventing boron penetration through thin gate oxide of P-channe Preventing boron penetration through thin gate oxide of P-channe

1999-03-12

1999-10-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257374, 257607, 257913, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059733705

ABSTRACT:
A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon is implanted into the polysilicon gate electrode of the PMOS device functioning as a diffusion barrier for preventing boron penetration through the thin gate oxide and into the semiconductor substrate. As a result, the reliability of the CMOS device will be enhanced.

REFERENCES:
patent: 4764478 (1988-08-01), Hiruta
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5796166 (1998-08-01), Agnello et al.
Kase et al., "Eliminating Channeling Tail By Lower Dose Implantation," Mar. 26, 1990, Applied Physics Letters, vol. 56, NR. 13, pp. 1231-1232.

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