Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-31
1999-10-26
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257133, 257153, 257167, 257172, 257296, 257327, 257335, 257366, H01L 2976, H01L 2994
Patent
active
059733675
ABSTRACT:
A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC-DC converter, with the gates being driven by a pulse width modulation (PWM) control to vary the duty cycle of the gate drive signal and thereby regulate the output voltage of the DC-DC converter. In light load conditions, the larger gate is disconnected from the PWM control to reduce the gate capacitance which must be driven by the PWM control. In normal load conditions, the larger gate is connected to the PWM control to reduce the on-resistance of the MOSFET. Both of these operations increase the efficiency of the DC-DC converter.
REFERENCES:
patent: 3660697 (1972-05-01), Berglund et al.
patent: 4445202 (1984-04-01), Geotze et al.
patent: 5616945 (1997-04-01), Williams
Richard K. Williams et al., "Optimization of Complementary Power DMOSFETs for Low-Voltage High-Frequency DC-DC Conversion", IEEE Advan. Power Elec. Conf., APEC, May 1995, Dallas Texas, pp. 765-772.
Richard K. Williams et al., "High-Frequency DC/DC Converter for Lithium-Ion Battery Applications Utilizes Ultra-Fast CBiC/D Process Technology", 1995 IEEE, pp. 322-332.
Martin-Wallace Valencia
Siliconix incorporated
Steuber David E.
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