Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-01
1999-10-26
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257286, 257347, 257348, 257349, 257350, 257355, 257356, 257357, 257360, 257546, 257329, H01L 2994
Patent
active
059733586
ABSTRACT:
A semiconductor device is provided by forming an insulating film on a supporting substrate and a semiconductor layer on the insulating film, forming an MOS semiconductor component having a source, a drain and a gate on the semiconductor layer, forming at least one of the source region of the semiconductor layer provided with the source and the drain region thereof provided with the drain to have greater thickness than a channel region of the semiconductor layer provided with a gate oxide film and a gate on the gate oxide film, and forming at least one of the source and the drain to be separated from the insulating film by the semiconductor layer of opposite conductivity type therefrom. A bulk layer of the same conductivity type as the semiconductor layer is provided in a thick region of the semiconductor layer. An MNOS or MONOS semiconductor non-volatile memory cell can be formed by replacing the gate oxide film with a memory gate insulating film consisting of a silicon oxide film and a silicon nitride film.
REFERENCES:
patent: 5684318 (1997-11-01), Ayres et al.
Abraham Fetsum
Citizen Watch Co. Ltd.
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