Semiconductor device with high dielectric constant insulator mat

Details Semiconductor device with high dielectric constant insulator mat Semiconductor device with high dielectric constant insulator mat

1997-01-22

1999-10-26

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257301, H01L 2992, H01L 27108

Patent

active

059733519

ABSTRACT:
A semiconductor device having a capacitor containing an insulator material having a high dielectric constant and high charge storing capability of the following formula: (A.sup.1).sub.x (A.sup.2).sub.2-x (D).sub.d (B.sup.1).sub.y (B.sup.2).sub.1-y O.sub.4 where A.sup.1 and A.sup.2 are cations, B.sup.1 and B.sup.2 are anions, 0.ltoreq.x.ltoreq.2 with the proviso that A.sup.1 and A.sup.2 are different types of atoms when 0<x<2, and 0.ltoreq.y.ltoreq.1 with the proviso that B.sup.1 and B.sup.2 are different types of atoms when 0<y<1, and D is an optional dopant in a total amount of 0.ltoreq.d.ltoreq.0.1.

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