Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-08-30
1998-10-06
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438789, 438790, 438793, 438794, H01L 2100, H01L 2131
Patent
active
058175490
ABSTRACT:
A TFT having a crystalline semiconductor layer and a gate insulating film of silicon oxide is manufactured. The gate insulating film is formed by vapor phase deposition such as sputtering or CVD and the deposited silicon oxide is thermally annealed in a reactive nitrogen atmosphere. The silicon oxide film, especially, the boundary portion of the silicon oxide film close the active region is nitrided. Thus, dangling bonds included in the silicon oxide film can be neutralized.
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Takemura Yasuhiko
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Niebling John
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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