Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Patent
1996-10-09
1999-10-26
Dutton, Brian
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
438149, 438162, H01L 2120, H01L 2136, H01L 2100, H01L 2184
Patent
active
059727829
ABSTRACT:
Ultrasound treatment (UST) of poly-Si thin films on glass substrates is disclosed, for improving properties of such thin films for uses such in thin-film transistor applications. Hydrogenated films subjected to UST showed a strong decrease of the sheet resistivity. UST improves the electrical homogeneity of polycrystalline silicon as confirmed by spatially resolved surface photovoltage mapping. Spatially resolved photoluminescence and contact potential difference mapping confirmed that UST effect is grain boundary related. Studies of hydrogenated thin-film transistors demonstrated remarkable UST induced improvement in transistor characteristics, especially, a reduction of leakage current by as much as one order of magnitude and a shift of the threshold voltage. All these effects are believed to result from UST enhanced hydrogenation of dangling bonds at grain boundaries in polycrystalline silicon films.
REFERENCES:
patent: 5517037 (1996-05-01), Yamamoto
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Ostapenko et al, "Non-contact Real Time Monitoring of Hydrogenation Process by Surface Photovoltage Technique and Enhanced Hydrogenation Due to Ultrasound Treatment in Thin Film Poly-silicon on Glass," Proceedings of International Display Research Confere, Oct. 1994.
Ostapenko et al., "Increasing Short Minority Carrier Diffusion Lengths in Solar-grade Polycrystalline Silicon by Ultrasound Treatment," Appl.Phys.Lett., vol. 65, No. 12, pp. 1555-1557, Sep. 1994.
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