Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1997-11-07
1999-10-26
Chaudhuri, Olik
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438762, 438770, H01L 21762
Patent
active
059727799
ABSTRACT:
A field oxide formation method involving a primary field oxidation, which is carried out at a predetermined low temperature to form a field oxide film having a thickness smaller than a target thickness, and a secondary field oxidation, which is carried out at a higher temperature capable of relatively reducing the occurrence of a field thinning phenomenon, to form the remaining thickness portion of the target field oxide film. The field thinning phenomenon involved in a field oxidation is reduced. The characteristics of a finally produced gate oxide film is also improved. Consequently, the throughput and reliability of semiconductor devices having gate oxide films are improved.
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Chaudhuri Olik
Hyundai Electronics Industries
Mao Daniel H.
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