Method of increasing thickness of field oxide layer

Details Method of increasing thickness of field oxide layer Method of increasing thickness of field oxide layer

1998-04-13

1999-10-26

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 21762

Patent

active

059727756

ABSTRACT:
A method for increasing the thickness of field oxide layer is provided. At first, a layer of pad oxide and a layer of silicon nitride mask are defined on a semiconductor substrate, and then a field oxide layer, which isolates active device regions, is formed. After the layer of pad oxide and the layer of silicon nitride are removed, a layer of silicon oxide is formed overlying the field oxide layer. The mentioned silicon oxide layer can increase the thickness of field oxide layer for effectively isolating active device regions without enlarging Bird's Beak. The present invention can also effectively improve the Gate Coupling Ratio in a Flash EEPROM.

REFERENCES:
patent: 5851901 (1998-12-01), Gardner et al.

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