Method of detecting concentration of contamination on a semicond

Details Method of detecting concentration of contamination on a semicond Method of detecting concentration of contamination on a semicond

1998-06-17

1999-10-26

Niebling, John F.

Semiconductor device manufacturing: process

With measuring or testing

134 13, 134 34, H01L 2166, G01R 3126

Patent

active

059727268

ABSTRACT:
An oxide film is formed of a silicon substrate, and then the oxide film is cleaned together with the silicon substrate. Afterwards, a medical fluid is dropped on the oxide film which has been cleaned, and then the oxide film is dissolved by the medical fluid to collect contaminants included in the oxide film.

REFERENCES:
patent: 4591890 (1986-05-01), Lund et al.
patent: 4634497 (1987-01-01), Shimazaki
patent: 4990459 (1991-02-01), Maeda et al.

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