Semiconductor device

Details Semiconductor device Semiconductor device

1993-09-17

1995-07-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257506, 257565, 257588, H01L 2701, H01L 2712

Patent

active

054303176

ABSTRACT:
A transistor is formed on a bonded SOI substrate. A collector electrode is connected to the peripheral sides of the collector areas on the insulator. A first insulator of isolation is formed on the peripheral side of the collector electrode. A base electrode is connected to a base area on the first insulator of isolation. Second insulators of isolation are formed on the peripheral side of a base electrode, and emitter electrode is connected to an emitter area by the second insulators of isolation. The connections between the collector electrode and the collector areas, between the base electrode and the base area, and between the emitter electrode and the emitter area are made under the emitter electrode, so the occupation area is small.

REFERENCES:
patent: 5040037 (1991-08-01), Yamaguchi et al.
patent: 5212397 (1993-05-01), See et al.
"An Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology," G. P. Li et al, IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987.

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