Method of forming high resistivity regions in GaAs by deuteron i

Details Method of forming high resistivity regions in GaAs by deuteron i Method of forming high resistivity regions in GaAs by deuteron i

1980-06-12

1983-07-19

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 61, 357 91, H01L 21263

Patent

active

043941800

ABSTRACT:
A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.

REFERENCES:
patent: 3961989 (1976-06-01), Heslop
patent: 4290825 (1981-09-01), Dearnaley et al.
Ohmura et al., Phys. Stat. Solid. 15a (1973) 93.
Sattler et al., Phys. Rev. 161 (1967) 244.
Newman et al., Radiation Effects, 53 (1980) 41.

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