Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
Inventor
active
Method of forming high resistivity regions in GaAs by deuteron i
Semiconductor devices containing protons and deuterons implanted
No associations
LandOfFree
Ian J. Saunders does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Ian J. Saunders, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ian J. Saunders will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-545881