Stacked high voltage transistor unit

Details Stacked high voltage transistor unit Stacked high voltage transistor unit

1993-12-21

1995-01-17

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257491, 257409, 327427, 327566, H01L 2358, H01L 2976, H03K 17687

Patent

active

053828267

ABSTRACT:
A high current, high voltage transistor which can be easily electrically stacked to extend the voltage range and uses less silicon area than a conventional stacked transistor configuration and a configuration of field plates that provide the greatest breakdown voltages with the highest ohmic values. Also, a star shaped field plate design which provides the greatest breakdown voltages with the highest ohmic values. The field plate is constructed using several concentric rings connected by fingers that are wider at towards the center of the concentric rings and narrower towards the perimeter of the concentric rings.

REFERENCES:
patent: 4288806 (1981-09-01), Ronen
patent: 4333225 (1982-06-01), Yeh

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