Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1993-01-07
1995-01-17
Loke, Steven Ho Yin
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257170, 257339, 257491, 257538, H01L 2358, H01L 2974, H01L 2976, H01L 2900
Patent
active
053828259
ABSTRACT:
Semicondctor devices having a curved P-N junction in an active area of the device and an edge passivation region extending from the active area to an edge region of the device include an electrically resistive ribbon that spirals outwardly from the active area to the edge of the device so that a voltage difference between the active area and the edge region is spread along the length of the ribbon. The ribbon may take the form of a linear resistor or may include plural diodes. The distance between radially overlapping portions of the spiralling ribbon and the cross-sectional area of the ribbon may be varied to spread the equipotential lines in the device so as to reduce the effect of the curved P-N junctions on the breakdown voltage of the device.
REFERENCES:
patent: 3890698 (1975-06-01), Clark
patent: 4157563 (1979-06-01), Bosselaar
patent: 4947232 (1990-08-01), Ashida
Macary, et al., Comparison between Biased and Floating Guard Rings used as Junction Termination Technique, Proceedings of 1992 International Symposium on Power Semiconductor Devices & ICs, Tokyo, pp. 230-233.
Semiconductor Power Devices-Physics of Operation and Fabrication Technology, Ghandhi, pp. 56-73.
Harris Corporation
Loke Steven Ho Yin
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