MOSFET with assymetric lightly doped source-drain regions

Details MOSFET with assymetric lightly doped source-drain regions MOSFET with assymetric lightly doped source-drain regions

1993-03-31

1995-07-25

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257900, H01L 2978

Patent

active

054364825

ABSTRACT:
A lightly doped drain MOSFET has lightly doped portions on both the source and drain sides, with the drain side lightly doped portion being wider. The assymetrical structure may be provided by using different width sidewall spacers.

REFERENCES:
patent: 4760033 (1988-07-01), Mueller
patent: 4935379 (1990-06-01), Toyoshima
patent: 4937645 (1990-06-01), Ootsuka et al.
patent: 5061975 (1991-10-01), Inuishi et al.

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