Semiconductor memory device with complete inhibition of boosting

Details Semiconductor memory device with complete inhibition of boosting Semiconductor memory device with complete inhibition of boosting

1996-09-04

1997-09-09

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Signals

36518909, 365226, 36523006, 327142, 327143, G11C 700

Patent

active

056663137

ABSTRACT:
A word line drive signal generating circuit, which generates a word line drive signal RX to a selected word line, includes an RX generating circuit responsive to an external row address strobe signal *RAS (or/RAS) for generating word line drive signal RX, a determination circuit responsive to an operating power supply voltage level or an externally applied signal for determining whether the word line drive signal RX should be boosted up, and a boosting circuit responsive to the word line drive signal RX and an output of determination circuit for boosting up the word line drive signal RX. The word line drive signal RX is boosted up to or above the operating power supply voltage level only when the determination circuit determines it to be necessary. Thereby, a high voltage is not normally applied to the word line, so that deterioration of breakdown voltage of the word line is prevented, and the reliability of the word line is improved.

REFERENCES:
patent: 4321489 (1982-03-01), Higuchi et al.
patent: 4649523 (1987-03-01), Holder, Jr. et al.
patent: 4964084 (1990-10-01), Jung et al.
patent: 5073731 (1991-12-01), Oh
patent: 5077518 (1991-12-01), Han
patent: 5222042 (1993-06-01), Ichiguchi

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