Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1993-10-14

1995-07-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 118723R, C23F 102

Patent

active

054358809

ABSTRACT:
A plasma processing apparatus for processing a workpiece such as a semiconductor wafer in a plasma includes a downstream- or coaxial-type chamber for housing the workpiece. A first sheet-like electrode is mounted on an outer circumferential surface of the chamber and electrically connected to a high-frequency power supply, and a second sheet-like electrode is mounted on the outer circumferential surface of the chamber and connected to ground. The first and second sheet-like electrodes are spaced in confronting relationship from each other circumferentially of the chamber across or along the axis thereof. The first and second sheet-like electrodes have respective axial or circumferential arrays of successive teeth, such as rectangular comb teeth, extending circumferentially or axially of the chamber and respective axial or circumferential arrays of successive recesses which complementarily receive the teeth, respectively, in an interdigitating pattern. The teeth have respective edges spaced from the corresponding edges of the recesses by a substantially uniform gap.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5254214 (1993-10-01), Hijikata

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