Method of forming a capacitor using a photoresist contact sidewa

Fishing – trapping – and vermin destroying

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437 60, 437919, H01L 2170, H01L 2700

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active

054380111

ABSTRACT:
A method of forming a stacked container capacitor includes, a) providing a substrate having a node to which electrical connection to a capacitor is to be made; b) then, providing a layer of photoresist; c) patterning the photoresist to form a photoresist contact which overlaps within lateral confines of the node, and in a manner which produces inner photoresist contact sidewalls having standing wave ripples; d) providing a layer of sacrificial material over the photoresist and within the photoresist contact, the sacrificial layer having a thickness which less than completely fills the photoresist contact, the standing wave ripples first transferring to those regions of the sacrificial layer which overlap the photoresist contact inner sidewall standing wave ripples; e) anisotropically etching the sacrificial material to produce a male molding ring having outer sidewalls possessing the first transferred standing wave ripples; f) stripping the photoresist; g) providing a layer of electrically conductive material over and within the male molding ring, the first transferred standing wave ripples second transferring to those regions of the conductive layer which overlap the first transferred standing wave ripples; h) anisotropically etching the conductive layer to outwardly expose upper portions of the male molding ring and produce a capacitor container ring having inner sidewalls possessing the second transferred standing wave ripples, the capacitor container ring electrically contacting the node; i) stripping the male molding ring from the substrate; and j) providing a capacitor dielectric layer and outer capacitor plate over the capacitor container rippled inner sidewalls.

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