Method of fabricating polysilicon based resistors in Si-Ge heter

Details Method of fabricating polysilicon based resistors in Si-Ge heter Method of fabricating polysilicon based resistors in Si-Ge heter

1997-08-29

2000-03-21

Quach, T. N.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438318, 438330, 438332, H01L 21331

Patent

active

060402253

ABSTRACT:
A method that enables the fabrication of ballast resistors in polysilicon which can be fabricated in a manner so as to not relax the strained layers in the lattice of the silicon germanium transistor wherein the high temperature steps, associated with activating dopants to fabricate resistors with desired resistance values, are performed prior to the deposited epitaxial layers of silicon germanium.

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