Semiconductor device having electrostatic breakdown protection c

Details Semiconductor device having electrostatic breakdown protection c Semiconductor device having electrostatic breakdown protection c

1996-04-03

1998-01-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257361, 257362, H01L 2362

Patent

active

057104522

ABSTRACT:
A semiconductor device includes a metallic main line connected between an external terminal and an internal circuit, and a plurality of divided protection bipolar transistors connected in parallel to one another. Each of the divided protection bipolar transistors includes a collector and an emitter composed of first and second N diffused regions formed in a semiconductor substrate which are separated from each other. Each of the divided protection bipolar transistors also includes a base formed of a portion of a semiconductor substrate between the collector and the emitter. The collector is connected to a metallic sub line branched from the main line, and the emitter is connected to ground. The plurality of divided protection bipolar transistors have an equal breakdown voltage between the collector of the divided protection bipolar transistor and the semiconductor substrate. Thus, the protection device composed of a plurality of divided protection bipolar transistors connected in parallel to one another can effectively protect the internal circuit from a short electrostatic pulse.

REFERENCES:
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 4962320 (1990-10-01), Okada et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5268588 (1993-12-01), Marum
"Internal ESD Transients in Input Protection Circuits", IEEE, Y. Fong and C. Hu, 1989, pp. 77-81.

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