High-voltage lateral MOSFET SOI device having a semiconductor li

Details High-voltage lateral MOSFET SOI device having a semiconductor li High-voltage lateral MOSFET SOI device having a semiconductor li

1996-04-10

1998-01-20

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257140, 257141, H01L 2974, H01L 31111, H01L 2701, H01L 2712

Patent

active

057104514

ABSTRACT:
A Semiconductor-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate, and a lateral MOSFET on the buried insulating layer. The MOSFET includes a semiconductor surface layer on the buried insulating layer and has a source region of a first conductivity type, a channel region of a second conductivity type opposite to that of the first, an insulated gate electrode over the channel region and insulated therefrom, a lateral drift region of the second conductivity type, and a drain region of the first conductivity type laterally spaced apart from the channel region by the drift region. A semiconductor linkup region of the first conductivity type is provided between the channel region and the drift region and extends substantially through the semiconductor surface layer, and the source region of the device is electrically coupled to the drift region. This device configuration is particularly useful in providing a high-voltage p-channel MOS transistor using thin SOI high-voltage technology normally associated with fabricating n-channel devices.

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patent: 5412241 (1995-05-01), Merchant
patent: 5554546 (1996-09-01), Malhi
patent: 5633525 (1997-05-01), Kitamura et al.

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