Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1985-07-31

1987-06-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29569L, 29580, 148175, 357 17, 357 55, 357 56, 156649, 156655, 1566591, 156662, 252 792, 372 43, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046750746

ABSTRACT:
The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x<1) having a surface (100), a step of forming on the first layer a second layer of Ga.sub.1-y Al.sub.y As (0.ltoreq.y<1) having a surface (100), and a step of chemically etching the layers from a level above the second layer and along the direction of <011>. The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.

REFERENCES:
patent: 4029531 (1977-06-01), Marinell
patent: 4213805 (1980-07-01), Tsukada
patent: 4341010 (1982-07-01), Tijburg et al.
patent: 4354898 (1982-10-01), Coldren et al.

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