Etching method for a silicon-containing layer using hydrogen bro

Details Etching method for a silicon-containing layer using hydrogen bro Etching method for a silicon-containing layer using hydrogen bro

1992-12-18

1994-11-29

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 437228, H01L 21306

Patent

active

053686845

ABSTRACT:
A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl.sub.2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O.sub.2 gas to each of these gases.

REFERENCES:
patent: 4450042 (1984-05-01), Purdes
patent: 4490209 (1984-12-01), Hartman
patent: 4521275 (1985-06-01), Purdes
patent: 4799991 (1989-01-01), Dockrey
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 5007982 (1991-04-01), Tsou
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5242536 (1993-09-01), Schoenborn
Translation of Iizuka JP3-241829.

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