Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-02-02
1997-04-29
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, 257413, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056252170
ABSTRACT:
A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.
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patent: 5097301 (1992-03-01), Sanchez
Semiconductor Devices--Physics and Technology, Sze, pp. 376-377, Jan., 1985.
Hoyt, et al., "Polycrystalline Carbon. A Novel Material for Gate Electrodes in MOS Technology", International Conference on SSDM, Aug. 26-28, 1992, pp. 557-559.
Hoyt, et al., "Polycrystalline Carbon: A Novel Material for Gate Electrodes in MOS Technology", Japanese Journal of Applie Physics, Part 1, International Conference on SSDM, Aug. 26-28, 1992, pp. 380-383.
Hwang, et al. "Novel Polysilicon/TiN Stacked-Gate Structure For Fully-Depleted SOI/CMOS" 1992 International Electron Devices Meeting, Dec. 13-16, 1992.
Kim, K. et al. "Tungsten Silicide/Titanium Nitride Compound Gate For Submicron CMOSFET" 1990 Symposium on VLSI Technology pub. 1990 IEEE, pp. 115-116 no month.
Cadien Kenneth C.
Chau Robert S.
Fraser David B.
Raghavan Gopal
Yau Leopoldo D.
Intel Corporation
Loke Steven H.
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