Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-05-02

1999-09-28

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257577, 257903, 365154, 365174, 365177, H01L 2976, H01L 2994

Patent

active

059593342

ABSTRACT:
A bipolar transistor is formed by forming a base region continuing from a source/drain region of an MOS transistor, as a link base region, and forming an emitter region at a bit line contact hole by impurity implantation. Alternatively, the bipolar transistor is formed by forming an intrinsic base region and an emitter region at a bit line contact hole by impurity implantation. The intrinsic base region is made deeper than the source/drain region. Further, the impurity of the intrinsic base region is made different from that of the link base region.

REFERENCES:
patent: 4868628 (1989-09-01), Simmons
patent: 5428243 (1995-06-01), Wylie
patent: 5480816 (1996-01-01), Uga et al.
patent: 5483483 (1996-01-01), Choi et al.
patent: 5687111 (1997-11-01), Wada et al.
An Ultra-Shallow Link Base for a Double Polysilicon Bipolar Transistor, J.D. Hayden et al., 1992IEEE, pp. 96-99.

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