Semiconductor memory device with simultaneously write capability

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

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Details

711111, 711154, 36518905, 36523001, 36523003, G06F 1300, G11C 700

Patent

active

060322225

ABSTRACT:
The present invention provides a semiconductor memory device having a block write function to perform an image processing at a high speed for any region on an image plane. The semiconductor memory device comprises a column decoder circuit 1; a column address latch circuit 2; a write control circuit 3 including NMOS transistors 13; a column mask register 4 including registers 10; a color register 5 including registers 11n; a Y switch 6 including switches 14; a memory cell 7; a block write control circuit 8; a column mask control circuit 9 including NOR gates 12; a column address pre-decode circuit 15 corresponding to subordinate column addresses Y0, Y1 and Y2; and a column address pre-decode circuit 16 corresponding to superordinate column addresses Y3, Y4 and Y5.

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