Semiconductor light emitting device, its manufacturing method an

Details Semiconductor light emitting device, its manufacturing method an Semiconductor light emitting device, its manufacturing method an

1997-11-10

1999-04-27

Swann, Tod R.

Dynamic information storage or retrieval

Specific detail of information handling portion of system

Radiation beam modification of or by storage medium

369122, 372 43, 372 45, 438 43, 438 44, 438 45, H01S 318

Patent

active

058986626

ABSTRACT:
A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.

REFERENCES:
patent: 5657336 (1997-08-01), Okuyama et al.
patent: 5764672 (1998-06-01), Ukita et al.
patent: 5766345 (1998-06-01), Tomita et al.
patent: 5780322 (1998-07-01), Tamamura et al.

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