Semiconductor device and power converter using same

Details Semiconductor device and power converter using same Semiconductor device and power converter using same

1997-07-15

1999-04-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257488, 257489, 257490, 257494, H01L 2358

Patent

active

058981993

ABSTRACT:
A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further surrounds those p layers, forward field plates extending in the peripheral direction and reverse field plates extending in the inside direction, the field plates being in contact at a low resistance with the p and n+ layers and reaching the surface of an n- layer through an insulating film, the area of the field plates being not less than one half of the n- surface. This arrangement is particularly effective in stabilizing the blocking voltage of a high voltage semiconductor device which is used in a severe environment, and is very effective in improving the reliability of a high voltage control unit.

REFERENCES:
patent: 3763406 (1973-10-01), Bosselaar
patent: 4691224 (1987-09-01), Takada
patent: 5691553 (1997-11-01), Mori et al.

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