Heat sink for semiconductors and manufacturing process thereof

Details Heat sink for semiconductors and manufacturing process thereof Heat sink for semiconductors and manufacturing process thereof

1998-07-23

2000-02-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257703, 428325, 428660, H01L 2310

Patent

active

060312858

ABSTRACT:
A highly heat conductive heat sink comprising diamond particles yet eliminating heat distortion problems caused by the difference in thermal expansion with a semiconductor, and a manufacturing method thereof. Melting of an alloy (C), which comprises a metal (A) of at least one metal selected from the group consisting of Cu, Ag, Au, Al, Mg, and Zn; and a metal (B) of at least one metal selected from the group consisting of the groups 4a and 5a of the Periodic Table and chromium, around diamond particles forms on the surface thereof a metal carbide (B'), which enables the strong bonding between the diamond particles and the metal (A) and thus produces a highly heat conductive heat sink having a much higher thermal conductivity than the metal (A). This structure is attainable by either an infiltration method or sintering method. A special feature, or effectiveness, of the invention lies in that the metal carbide (B') is formed on the surface of the diamond particles at the same time as or after the formation of a metal matrix. It is essential that not less than a quarter of the surface of the diamond particles be covered with the metal carbide (B') and the diamond particles be separated with one another by metal.

REFERENCES:
patent: 5045972 (1991-09-01), Supan et al.
patent: 5120495 (1992-06-01), Supan et al.
patent: 5130771 (1992-07-01), Burnham et al.
patent: 5645937 (1997-07-01), Noda et al.
patent: 5783316 (1998-07-01), Collela et al.
patent: 5786075 (1998-07-01), Mishuku et al.

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