Semiconductor device with conductive sidewall film

Details Semiconductor device with conductive sidewall film Semiconductor device with conductive sidewall film

1997-11-10

2000-02-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257900, H01L 27088

Patent

active

060312661

ABSTRACT:
In the MOS FET semiconductor device having a LDD structure, a polysilicon layer of which a side wall film is formed is provided, the polysilicon layer is made conductive by doping an impurity by ion-implantation. The side wall film of conductive polysilicon can be used as a wiring by applying voltages to the end portions of the side wall film. The side wall film can be used not only as a wiring, but also as a resistor layer. The side wall film may be formed on the side surface of a resistor layer. The side wall film can be used as a wiring by doping impurity into the side wall film by ion-implantation so as to make the side wall film conductive. By virtue of these structures, the semiconductor chip in the semiconductor device can be reduced in size.

REFERENCES:
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5132758 (1992-07-01), Minami et al.
patent: 5831319 (1998-11-01), Pan

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