Semiconductor memory device having cylindrical capacitor and man

Details Semiconductor memory device having cylindrical capacitor and man Semiconductor memory device having cylindrical capacitor and man

1993-06-03

1995-04-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, H01L 2968

Patent

active

054081149

ABSTRACT:
The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 11. A barrier film 14 is provided on the insulating films 8, 12 for protecting the insulating films 8, 12 from etchant. A cylindrical storage node 170 is electrically connected to the conductive layer 6. The cylindrical storage node 170 includes a bottom conductive portion 17a and a sidewall conductive portion 17b. An outer surface of the storage node 170 is covered with a capacitor insulating film 112. The outer surface of the cylindrical storage node 170 is covered with a cell plate 22, with the capacitor insulating film 112 interposed therebetween.

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"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's", Kaga et al., IEEE vol. 38, No. 2, Feb. 1991, pp. 255-261.
"Novel Stacked Capacitor Cell for 64 Mb DRAM", Wakamiya et al., VLSI Symposium '89, pp. 69-70.
"A New Stacked Capacitor Cell with Thin Box Structure Storage Node", Inoue et al., Extended Abstracts of the 21st Conference on Solid Devices and Materials, Tokyo, 1989, pp. 141-144.

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