Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-24
1997-02-04
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257397, 257623, H01L 2976
Patent
active
056001614
ABSTRACT:
The present invention is a process for forming diffusion areas and field isolation regions on a silicon substrate, by the steps of: growing a field oxide layer on the surface of the substrate; forming a mask pattern which exposes a plurality of spaced-apart regions on the surface of the field oxide layer; removing portions of the field oxide layer in the exposed, spaced-apart regions with an anisotropic etch so as to leave a cavity in each spaced-apart region, each cavity having as its floor an exposed region of the silicon substrate, and having vertical walls of field oxide; angularly chamfering the rim of each cavity with a facet etch; and filling each cavity with silicon using selective epitaxial growth, and using the floor of each cavity as the seed crystal for such growth.
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Fox, III Angus C.
Gonzalez Fernando
Limanek Robert P.
Micro)n Technology, Inc.
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