Semiconductor device fabrication method and apparatus using conn

Details Semiconductor device fabrication method and apparatus using conn Semiconductor device fabrication method and apparatus using conn

1998-01-22

2000-08-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, H01L 2976

Patent

active

060970685

ABSTRACT:
A semiconductor device and method of fabrication for such device in which a P- epitaxial layer is positioned above a P++ substrate. A P++ buried layer implant is positioned within the device between the P++ substrate and the P- epitaxial layer. A connecting p+ implant is placed within the epitaxial layer above the buried p+ blanket layer implant. In one exemplary embodiment, the device includes a shallow P-well with the P+ connecting implant in a position within the epitaxial layer connecting the shallow P-well and the buried P+ blanket implant layer.

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