Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-03
2000-08-01
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257499, H01L 2976, H01L 2994, H01L 2900
Patent
active
060970677
ABSTRACT:
In a semiconductor apparatus comprises a signal input portion having an amplifying circuit including one, two or more insulating gate type transistors (MIS Tr), one MIS Tr or at least one (M1) of the two or more MIS Trs of the signal input portion is an MIS Tr of one conductivity channel type. The MIS Tr (M1) of the one conductivity channel type is formed in a semiconductor region which is electrically isolated from the other MIS Tr (M3) of one conductivity channel type provided for a circuit portion other than the signal input portion, so that an input threshold level of the signal amplifying circuit is made coincide with a DC level of the input signal, thereby preventing an erroneous operation.
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Ohzu Hayao
Ouchi Akihiro
Sakashita Yukihiko
Canon Kabushiki Kaisha
Fahmy Wael M.
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