Semiconductor device having a multi-wall cylindrical capacitor

Details Semiconductor device having a multi-wall cylindrical capacitor Semiconductor device having a multi-wall cylindrical capacitor

1997-08-21

2000-08-01

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257309, H01L 27108, H01L 2976, H01L 2994

Patent

active

060970537

ABSTRACT:
A semiconductor memory device comprises a capacitor having a double-cylinder structure wherein a storage electrode has two cylindrical portions each opposing an upper electrode, with a capacitor insulating film disposed therebetween. The outer cylindrical portion has a smaller length than the inner cylindrical portion, thereby allowing the capacitor to have a smaller height as viewed toward the outer direction. The boundary between the memory array region and peripheral region has a moderate step to thereby prevent breakage of an overlying interconnection and reduce etching residue.

REFERENCES:
patent: 5142438 (1992-08-01), Reinberg et al.

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