Electron beam apparatus comprising a semiconductor electron emit

Details Electron beam apparatus comprising a semiconductor electron emit Electron beam apparatus comprising a semiconductor electron emit

1987-07-17

1989-10-03

Church, Craig E.

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

250306, 313346R, 313366, G21K 700

Patent

active

048719110

ABSTRACT:
An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

REFERENCES:
patent: 3334248 (1967-08-01), Stratton
patent: 3631303 (1971-12-01), Antypas
patent: 3931519 (1976-01-01), Coates et al.
patent: 4325084 (1982-04-01), Van Gorkom
patent: 4370797 (1983-02-01), Van Gorkom

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